IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Product names and markings noted herein may be trademarks of their respective owners. Dimension D and E do not include mold flash. Lead finish uncontrolled in L1.
IRFP 데이터시트(PDF) – International Rectifier
Datashheet using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Mold flash shall not exceed 0.
Repetitive rating; pulse width limited by maximum junction temperature see fig. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Fairchild Semiconductor IRFP Datasheet.
Drain Current Current regulator Same type as D. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
Case Temperature tr td off tf Fig. Vishay makes no warranty, representation or guarantee regarding the suitability of the products datashfet any particular purpose or the continuing production of any product.
IRFP440 PDF Datasheet浏览和下载
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These dimensions are measured at the outermost extremes of the plastic body. Contour of slot optional.
Thermal pad contour optional with dimensions D1 and E1. Xian and Mingxin actually photo. B, Mar This datasheet is subject to change without notice.